Two Basic Structures of Thin Film Solar Cells
Author: Source: Datetime: 2016-09-29 14:55:33
Amorphous silicon thin film solar power battery manufacturing process
The structure, working principle and fabrication process of thin film solar cells are described using "front wall" type amorphous silicon thin film solar cells as an example.
Structure and working principle of amorphous silicon thin film
The rigid amorphous silicon solar cell consists of a transparent conductive film (TCO) on the water-white glass), a type amorphous silicon P, an intrinsic layer amorphous silicon i, an N-type amorphous silicon, and an aluminum thin film. The electrons pass through glass into the i-layer amorphous silicon, which is separated by the p-i-n junction. The photogenerated voltage is formed between the TCO and the aluminum film, and the photocurrent is flowed after the load.
Preparation of Transparent Conducting Films
Transparent conductive film (TCO) used as the front contact electrode of amorphous silicon solar cells, usually by the SnO2: F composition, its main requirements are: ① high light transmittance; ② low resistivity; ③ uniform Good. Preparation of transparent conductive film, the first with a neutral detergent to clean the glass substrate, and then rinse with deionized water and drying.
The formation of the intrinsic layer deposition i layer of gas for the SiH4 and H2 gas mixture, in the deposition of intrinsic layer before the use of a large number of electronic grade SiH4 washing deposition chamber and related gas, try to avoid contamination of various impurity atoms. The a-Si: H solar cell has two requirements for the intrinsic layer. One is to minimize the space charge density in the intrinsic layer and improve the lifetime and migration of the photogenerated carriers. Rate, in determining the intrinsic layer thickness, to improve the junction of the electric field, thereby enhancing the photogenerated carrier collection efficiency and stability of the lifePo4 battery pack; the second is to require a suitable thickness, as much as possible to increase the intrinsic layer of light absorb. The a-Si: H intrinsic layer depends on the RF power, the substrate temperature, the reaction pressure and the gas flow rate during the preparation. In addition, SiH4 is diluted with H2, the a-Si: high.
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